NRAM memory from nanotubes comes with a number of advantages

Japanese company Fujitsu will begin production of non-volatile NRAM memories based on carbon nanotubes next year, the specialized source reported.

With research in the field of NRAM, or Nano-RAM, the American company Nantero has long been involved. But two years ago, licenses for commercial activity with NRAMs were acquired by Japanese manufacturers Fujitsu Semiconductor and Mie Fujitsu Semiconductor.

The principle of NRAM memories is based on the positioning of carbon nanotubes. The key layer in the cell is an array of hundreds of nanotubes intertwined randomly.

One value of the control voltage deforms the nanotubes, resulting in a conducting circuit, and the other value causes reverse deformation, interrupting the chain. Using this mechanism as a memory is possible due to the fact that in both states the nanotubes are stable.

Among the advantages of NRAM, specialists emphasize energy independence, high access speed, durability and low power consumption during read and write operations. Moreover, the theoretically small nanotube size allows for high density data storage.

Fujitsu’s initial plans are for NRAMs to produce 55-nanometer technology, and later to a 40-nanometer process. NRAM is not expected to quickly become a mass memory, given the time it takes to develop the market and optimize production.